| Samsung Semiconductor RAM chip marking |
SAMSUNG
SEC |
www.intl.samsungsemi.com
www.sec.samsung.com |
K4
KM |
K4 - Samsung Memory
KM - Samsung Semiconductor |
| 843 - date of manufacture |
8 - year of manufacture (8 - 1998, 9 - 1999, ...)
43 - week of manufacture |
| 4 - RAM type |
23 - Mask ROM
29 - NAND-Flash
4 - DRAM
6 - Asynchronous SRAM
7 - Synchronous SRAM |
| 16 - bit organization |
1 - x1bit
4 - x4bit
8 - x8bit
9 - x9bit
16 - x16bit
32 - x32bit |
| V - voltage |
C - 5.0V
V - 3.3V
U - 3.0V
S - 2.5V
Q - 2.5V
R - 2.0V |
| 17 - memory density |
25 - 256KBit
51 - 512KBit
1 - 1MBit
4 - 4MBit
8 - 8MBit
16 - 16MBit
32 - 32MBit
64 - 64MBit |
| 0 - refresh |
0 - 1024 (4MD), 4096 (16MD), 8192 (64MD)
1 - 512 (4MD), 2048 (16MD), 4096 (64MD)
2 - 1024 (16MD) |
| 5 - RAM type |
0 - FP mode
1 - ?
2 - ?
3 - FP mode (quad CAS)
4 - EDO mode
5 - EDO mode (quad CAS) |
| C - die revision |
[none] - 1st generation
A - 2nd generation
B - 3rd generation
C, D, ... |
| SJ - package option |
J - SOJ
K - SOJ (shrinked package)
T - TSOP II
S - TSOP II (shrinked package)
C - CSP |
| E - Temperature |
[none] - normal range (0 to 70°C)
E - extended range (-25 to 85°C)
I - industrial range (-40 to 85°C) |
| E - power (DC current) |
[none] normal power
E - low power |
| G8 - min cycle time |
4 - 40ns
45 - 45ns
5 - 50ns
55 - 55ns
6 - 60ns
7- 70ns
G8 - 8ns CAS2 PC100
10 - 10ns CAS3 PC66
GL - 10ns CAS3 PC100
GH - 10ns CAS2 PC100 |
| TPI132D3 - Serialization code |
? |
